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- TP65H050G4BS
- Proizvođač
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- Kategorije
- MOSFET
- RoHS
- list
- Opis
- MOSFET GAN FET 650V 34A TO263
TP65H050G4BS
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Tehnički podaci
- Proizvođač
- Transphorm
- Kategorije
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 34 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 119 W
- Qg - Gate Charge
- 16 nC
- Rds On - Drain-Source Resistance
- 60 mOhms
- Technology
- SI
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
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Najnovije recenzije
Good material. Great seller, efficient and insurance. Ok
Janos More
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Khalid Ali
Excellent transaction five star service thank you, we will do business again.
Ashley Stovall
All come together. The number and quality is not satisfactory. Just like in the description. Only very long service! Seller and shop recommend!
Lorenzo Sandini
TP65H050G4BS Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za TP65
- TP65H050G4BS Integriran
- TP65H050G4BS RoHS
- TP65H050G4BS PDF Datasheet
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- TP65H050G4BS Dio
- TP65H050G4BS Kupiti
- TP65H050G4BS Distributer
- TP65H050G4BS PDF
- TP65H050G4BS sastavni dio
- TP65H050G4BS ICS
- TP65H050G4BS Preuzmite PDF
- TP65H050G4BS Preuzmite podatkovni list
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- TP65H050G4BS List s podacima
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- TP65H050G4BS Inventar
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- TP65H050G4BS Bez olova
- TP65H050G4BS Specifikacija
- TP65H050G4BS Vruće ponude
- TP65H050G4BS Cijena prijeloma
- TP65H050G4BS Tehnički podaci
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