Broj dijela IMW120R060M1HXKSA1 Proizvođač Infineon Technologies Kategorije MOSFET RoHS list IMW120R060M1HXKSA1 Opis MOSFET SIC DISCRETE
Proizvođač Infineon Technologies Kategorije MOSFET Channel Mode Enhancement Id - Continuous Drain Current 36 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 150 W Qg - Gate Charge 31 nC Rds On - Drain-Source Resistance 78 mOhms Technology SiC Tradename CoolSiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 7 V, + 23 V Vgs th - Gate-Source Threshold Voltage 5.7 V