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- IKFW90N60EH3XKSA1
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
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- IGBT Transistors INDUSTRY 14
IKFW90N60EH3XKSA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.85 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 77 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 178 W
- Series
- Trenchstop High Speed 3
- Technology
- SI
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Najnovije recenzije
Yes, they are all here. :)
sudheer kumar sirra
Hello! Order received, very happy. Thank you very much!
Flavia
packed pretty good, all is ok,-seller.
Julianah Yungkim
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
Možda ti se također svidi
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Osobe koje gledaju IKFW90N60EH3XKSA1 zatim je kupio
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKFW90N60EH3XKSA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKFW
- IKFW90N60EH3XKSA1 Integriran
- IKFW90N60EH3XKSA1 RoHS
- IKFW90N60EH3XKSA1 PDF Datasheet
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- IKFW90N60EH3XKSA1 Dio
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- IKFW90N60EH3XKSA1 Distributer
- IKFW90N60EH3XKSA1 PDF
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