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- IKB40N65EH5ATMA1
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
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- IGBT Transistors INDUSTRY 14
IKB40N65EH5ATMA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 250 W
- Series
- Trenchstop IGBT5
- Technology
- SI
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Najnovije recenzije
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Hello! Order received, very happy. Thank you very much!
Flavia
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Možda ti se također svidi
Infineon Technologies
Infineon Technologies
Infineon Technologies
Osobe koje gledaju IKB40N65EH5ATMA1 zatim je kupio
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKB40N65EH5ATMA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKB4
- IKB40N65EH5ATMA1 Integriran
- IKB40N65EH5ATMA1 RoHS
- IKB40N65EH5ATMA1 PDF Datasheet
- IKB40N65EH5ATMA1 list
- IKB40N65EH5ATMA1 Dio
- IKB40N65EH5ATMA1 Kupiti
- IKB40N65EH5ATMA1 Distributer
- IKB40N65EH5ATMA1 PDF
- IKB40N65EH5ATMA1 sastavni dio
- IKB40N65EH5ATMA1 ICS
- IKB40N65EH5ATMA1 Preuzmite PDF
- IKB40N65EH5ATMA1 Preuzmite podatkovni list
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- IKB40N65EH5ATMA1 List s podacima
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- IKB40N65EH5ATMA1 Tehnički podaci
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