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- IKB20N65EH5ATMA1
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- RoHS
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- Opis
- IGBT Transistors INDUSTRY 14
IKB20N65EH5ATMA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 38 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 125 W
- Series
- Trenchstop IGBT5
- Technology
- SI
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Najnovije recenzije
Received, Fast shipping, not checked yet
Roy Boustany
Takes 8 days to Japan. Good!
Alex Fragkos
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Babatunde Alli
all is well. checked work. seller recommend.
Maurice E.
Možda ti se također svidi
Infineon Technologies
Infineon Technologies
Infineon Technologies
Osobe koje gledaju IKB20N65EH5ATMA1 zatim je kupio
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKB20N65EH5ATMA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKB2
- IKB20N65EH5ATMA1 Integriran
- IKB20N65EH5ATMA1 RoHS
- IKB20N65EH5ATMA1 PDF Datasheet
- IKB20N65EH5ATMA1 list
- IKB20N65EH5ATMA1 Dio
- IKB20N65EH5ATMA1 Kupiti
- IKB20N65EH5ATMA1 Distributer
- IKB20N65EH5ATMA1 PDF
- IKB20N65EH5ATMA1 sastavni dio
- IKB20N65EH5ATMA1 ICS
- IKB20N65EH5ATMA1 Preuzmite PDF
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