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- IKFW75N60ETXKSA1
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- Infineon Technologies
- Kategorije
- IGBT Transistors
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- IGBT Transistors INDUSTRY 14
IKFW75N60ETXKSA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 178 W
- Series
- Trenchstop IGBT3
- Technology
- SI
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Najnovije recenzije
it is safe and sound all, thank you seller!
Arturo Madril
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
Everything is fine!
Jane Doe
Možda ti se također svidi
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Osobe koje gledaju IKFW75N60ETXKSA1 zatim je kupio
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKFW75N60ETXKSA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKFW
- IKFW75N60ETXKSA1 Integriran
- IKFW75N60ETXKSA1 RoHS
- IKFW75N60ETXKSA1 PDF Datasheet
- IKFW75N60ETXKSA1 list
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- IKFW75N60ETXKSA1 Distributer
- IKFW75N60ETXKSA1 PDF
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