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- IGBT Transistors IGBT w/ INTG DIODE 600V 8A
IKD04N60RFATMA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 8 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 75 W
- Series
- Trenchstop RC
- Technology
- SI
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Najnovije recenzije
Teşekkürler
Ashir Hussain
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Možda ti se također svidi
Osobe koje gledaju IKD04N60RFATMA1 zatim je kupio
IKD04N60RFATMA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKD0
- IKD04N60RFATMA1 Integriran
- IKD04N60RFATMA1 RoHS
- IKD04N60RFATMA1 PDF Datasheet
- IKD04N60RFATMA1 list
- IKD04N60RFATMA1 Dio
- IKD04N60RFATMA1 Kupiti
- IKD04N60RFATMA1 Distributer
- IKD04N60RFATMA1 PDF
- IKD04N60RFATMA1 sastavni dio
- IKD04N60RFATMA1 ICS
- IKD04N60RFATMA1 Preuzmite PDF
- IKD04N60RFATMA1 Preuzmite podatkovni list
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- IKD04N60RFATMA1 Specifikacija
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- IKD04N60RFATMA1 Cijena prijeloma
- IKD04N60RFATMA1 Tehnički podaci
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