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- IKFW50N60DH3XKSA1
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- RoHS
- list
- Opis
- IGBT Transistors INDUSTRY 14
IKFW50N60DH3XKSA1
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Tehnički podaci
- Proizvođač
- Infineon Technologies
- Kategorije
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.85 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 53 A
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 145 W
- Series
- Trenchstop High Speed 3
- Technology
- SI
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Najnovije recenzije
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Quickly came to CET, all in one package. Look at the rules
Earl Sault
it is safe and sound all, thank you seller!
Arturo Madril
Everything is excellent! recommend this seller!
Stoyan Chaykov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Možda ti se također svidi
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Osobe koje gledaju IKFW50N60DH3XKSA1 zatim je kupio
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IKFW50N60DH3XKSA1 Vijesti
03/14/2023
03/13/2023
03/09/2023
Povezane ključne riječi za IKFW
- IKFW50N60DH3XKSA1 Integriran
- IKFW50N60DH3XKSA1 RoHS
- IKFW50N60DH3XKSA1 PDF Datasheet
- IKFW50N60DH3XKSA1 list
- IKFW50N60DH3XKSA1 Dio
- IKFW50N60DH3XKSA1 Kupiti
- IKFW50N60DH3XKSA1 Distributer
- IKFW50N60DH3XKSA1 PDF
- IKFW50N60DH3XKSA1 sastavni dio
- IKFW50N60DH3XKSA1 ICS
- IKFW50N60DH3XKSA1 Preuzmite PDF
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